accumulation region 31
amplifier, specifications (for SC filters) 433–435
aperture jitter 421
balanced transconductors for MOSFET-C filters 368–370
bandgap voltage reference
based on weighted VGS 217–218
CMOS 211
operating principle 209–210
resistorless CMOS 216–217
sub-1-V operation 214–216
bipolar junction transistor 5–7
Ebers–Moll model 6, 7
reciprocity relation 7
bipolar transistor 112–114
Gummel number 210
saturation current 209
biquad filter 376
effect of the Q-factor of the integrator 376
pole frequency 376
pole Q-factor 376
body-effect factor 10
Boltzmann constant 135
Boltzmann distribution law 26
bulk current 76–77
capacitance per unit area
bulk 33
inversion 34
oxide 30
semiconductor 32
small-signal 32
capacitance 102
temperature coefficient 103, 104–105, , 106–109
voltage coefficient 104–105, , 108–109
capacitances, intrinsic 60–62
capacitances, of the extrinsic transistor 62
capacitive coefficients 59–62, , 83
capacitor, metal–oxide–semiconductor
See MOS structure, two-terminal
capacitors 101–109
metal–insulator–metal (MIM) 102–104
metal–oxide–semiconductor (MOS) 104–106
cascode amplifiers 246–249
folded-cascode 246–249
regulated cascode 233, 250, 288
telescopic 246–249
cascode current mirror 187–191
high-swing 189–191
improved Wilson 197
regulated 191
self-biased 188–189
channel length 41
channel-length modulation (CLM) 71–72
channel-length shortening 72
charge-injection errors 413–417
reducing 415–416
rejecting 416–417
charges, source and drain, stored 57
class-AB amplifier 344–348, 349
class-AB source follower 344
CMOS process, deep-submicron 89–91
CMOS PTAT voltage reference 218–219
CMOS technology 88–93
CMOS-compatible bipolar transistor 213
common-gate amplifier 239–242
voltage gain 241, 242
unity-gain frequency 242
input-referred noise voltage 242
common-mode (CM) detector 353, 355, 356
common-mode feedback (CMFB) 349–358
common-mode input range 294
common-mode voltage 256
common-source amplifier
current source load 231–236
diode-connected load 226–228
resistive load 225–226
compact MOSFET models 452
complementary to absolute temperature (CTAT) 209
corner frequency 150
correlation
admittance 151–154
coefficient 143
factor 152
current mirror error 179–184
caused by difference between drain voltages 179–180
caused by transistor mismatch 180–184
current mirror
class-A 192
class-AB 192
frequency response 184–186
harmonic distortion 193–195
input admittance 185
low-frequency gain 185
noise 186–187
output admittance 186
small-signal model 184–186
current-mirror load differential amplifier
common-mode gain 266–269
common-mode input range 261–262
common-mode rejection ratio (CMRR) 269
differential voltage gain 264–265
noise 273–275
offset voltage 262–264
output voltage range 262
power-supply rejection ratio (PSRR) 271–273
settling response 275–277
slew rate 275
voltage transfer characteristic 260–261
current
normalization 46
sheet normalization 46
cut-off frequency, intrinsic 66
current routing 183
design rules 118–120
differential amplifier 252–277, 299
resistive load 259
current-mirror load 260–277
digitally-programmable V–I converter 394
distortion
low (SC filters) 435–436
distortion of the MOSFET operating as a resistor 397–398
dominant-pole approximation 233, 288
drain current 40–41
forward (reverse) component of 42
drain-induced barrier lowering (DIBL) 72–73
dynamic range 387
Early voltage 73, 473–479
channel-length modulation (CLM) 475–476
drain-induced barrier lowering (DIBL) 475
effective mobility 68–69
energy equipartition principle 385
Fermi potential 32
filter tuning schemes 395–397
direct 395
indirect 396
filters
biquad 430–432
first-order 425–426
frequency response of first-order 426
switched-capacitor 423–436
switched-current 441
first-order low-pass MOSFET-C filter 376
flat-band voltage 30–31
fluctuations, drain current 137–139
folded-cascode operational amplifier 306–312
CMRR 309–310
common-mode input range 307
dc characteristics 306–308
noise 311–312
offset voltage 307–308
output voltage 307
PSRR 310–311
slew rate 312
voltage gain 308–309
fully differential operational amplifier 349–358
gain-boost technique 250–252
gate threshold voltage 237
gate tunneling current 75–76
Gm-C filters 378
Gm-C integrator 383–384
output conductance 383
parasitic capacitance 383
phase compensation 385
phase deviation 384
transfer function 384
gyrator 392
Harry Black 292
IC fabrication 88–89
ideal current mirror 177
ideal operational amplifier 292–293
inductance 111
inductors 109–112
input-referred offset voltage 294
integrator
continuous time 428
frequency response 428
parasitic-insensitive 428–429
switched-capacitor 426–429
offset compensation 429–430
interconnections 92
intrinsic gain stage 228
frequency response of voltage gain 230
low-frequency voltage gain 229
bandwidth 230
gain–bandwidth product 230
unity-gain frequency 230
inversion charge-based models 452, 458–460
ACM model 459–460
BSIM5 model 460
EKV model 459
inversion coefficient 46
inversion region 32
inverting amplifier 294
jitter 421
junction field-effect transistors (JFETs) 98–99
latchup 114–115
lateral bipolar transistor 211, 213
layout
folded 124–125
for matching 121–124
interdigitated 125
mask 118–120
lithography, optical 115–118
mask layout 118–120
Miller capacitance 324
Miller capacitor 239
Miller effect 248,
mismatch
models 155–161, 162–164
(mis) matching energy 161–162
mobility, effective 68–69
Monte Carlo simulations 167–169
MOS current source 199–200
MOS structure, three-terminal 34–38
MOS structure, two-terminal 28–31
MOS transistor as a resistor 100–101
MOS transistor;
See MOSFET
MOSFET-C filters 366–367
MOSFET-C integrator 370–374
effect of op-amp non-idealities 372–373
effect of transistor distributed model 371–372
magnitude and phase plots 373
quality factor 374
time constant 370
unity-gain frequency 373, 374
MOSFET-only current divider 393
MOSFET
all-region model 19
body-effect factor 10
charge-control compact model 41–42
design space 20
gate capacitor 103, 106–109
layout 121–128
normalization current 46
output conductance 73–75
quasi-static small-signal model 65–67
slope factor 36, 42, 81
strong-inversion (SI) model 52–53
structure 91–92
transconductance parameter 10
transconductances 82
weak-inversion (WI) model 52
MOSVIEW 281–282
nested Miller compensation (NMC) 339
nested transconductance–capacitance compensation (NGCC) 340
noise
aliasing thermal 408
excess factor 147–148
flicker 136–137, 144–147
induced gate 141–144
in MOSFETs, thermal 139–144
mean-square value 135
quantization 409
short-channel effects on 140–141
shot 136
thermal 134–135
thermal (in a S/H) 406–409
two-port models 151–154
white 135
non-quasi-static small-signal model 62–65
time constants of 62, 63
normalization charge 27, 38
normalization current 46
normalized inversion charge density 46
operational transconductance amplifier (OTA) 293
OTA-C filters 378
p–n junctions 3–5
built-in potential 28
reverse saturation current 5
p-channel device 48
parallel–series association of transistors 390
parameter extraction 460–467
mobility 465–467
slope factor 463–465
specific current and threshold voltage 461–463
parameters, electrical 92
pinch-off voltage 38, 81
pole-zero doublet 266
power consumption and dynamic range 388–389
proportional to absolute temperature (PTAT) 210, 211,
PTAT current 214
push-pull amplifier 237–239
quality factor (SC biquad) 430, 431
quantum effects on the ACM model 471–472
quasi-static small-signal model 65–67
rail-to-rail input stages 340–342
resistance 94
resistivity, temperature coefficient 96
resistors 94–101
polysilicon 95–98
implanted and diffused 98–100
resizing rules 285
reuse of MOS analog design 283–287
sample-and-hold (circuits) 404–422
low voltage 417–421
sample-hold amplifier 294
sampled signal, spectrum 407
sampling
distortion 410–412, 444–445
voltage error 415
saturation current
forward 42
reverse 42
saturation voltage, drain-to-source (VDSsat) 51
scaling factors 285
scaling 284
channel-length 286–287
constant-inversion-level 285–286
second-order Tow–Thomas biquad filter 377
self-biased current source
MOSFET-only 205–207
resistive 201–205
series association of transistors 125–128
sheet resistance 94–96
short-channel effects in MOSFETs 68–77
signal-to-noise ratio 387
silicon
bandgap 209
intrinsic concentration 209
sizing and biasing of MOS transistors 279–281
slope factor 36, 42, 81
small-signal capacitances
See capacitance per unit area
small-signal model
See quasi-static small-signal model
small-signal transconductances 53–57
source follower 242–245, 343–344
input-referred noise voltage 245
voltage gain 244
voltage transfer characteristic 243
source-coupled pair 252–259
common-mode input range 254
common-mode transadmittance 257
dc transfer characteristic 253–254
differential transconductance 257
input offset voltage 255–256
static CMOS inverter 237, 346
strong inversion (SI) 52
supply-voltage scaling factor 284
surface potential-based models 452, 454–458
HiSIM model 456
MOS Model 11 (MM11) 456–457
PSP model 458
surface potential 30
symmetric operational amplifier 302–305
common-mode input voltage 303
dc characteristics 302–304
noise 305
offset voltage 303–304
slew rate 305
voltage gain 304
voltage transfer characteristic 303
telescopic-cascode differential amplifier 301–302
thermal charge 38
thermal voltage 27, 38
thershold voltage 42–45
equilibrium 43
gate-to-substrate threshold voltage 11
temperature effects on 44–45
three-stage operational amplifier 339
tradeoff between area and power consumption 279
transconductance-to-current ratio 54
transconductances 82
transconductors (V-I converters) 379–381
distortion 382–383
linearization 380
offset voltage 381–382
transform
z 447–448
transimpedance amplifier 294
transistor fabrication 89–91
transition frequency, intrinsic 66–68
translinear circuits 344
translinear loop 345, 346
two-stage operational amplifier 316–339
alternative forms of compensation 336–339
common-mode input range 321
common-mode rejection ratio 330
compensation capacitance 324
dc characteristics 321–322
dominant pole 327
extrapolated unity-gain frequency 327
frequency compensation 323
gain–bandwidth product 327
Miller-compensated 322–327
noise 332
nulling resistor 338
offset voltage 321–322
output voltage swing 321
phase margin 327
pole splitting 324
power-supply rejection ratio 330–331
secondary pole 326
slew rate 333–336
voltage gain 323–327
zero 326
two-transistor current mirror 177–178
unified charge-control model (UCCM) 36, 81
unified current-control model (UICM) 47
VT -based models 452, , 453
velocity saturation 69–71
vertical bipolar transistor 212
voltage follower 294, 298
voltage integrator 294
voltage routing 182
voltage-controlled resistor 367
weak avalanche 476
weak inversion (WI) 52
Widlar current source 200